Abstract
Zinc oxide (ZnO) thin films are widely used in modern electronics, optoelectronics, sensor systems, and photovoltaic technologies due to their unique structural and electrophysical properties. The characteristics of ZnO films strongly depend on deposition conditions and technological parameters used during synthesis. Among various fabrication methods, ion-plasma deposition is considered one of the most effective techniques for obtaining high-quality semiconductor thin films with controlled structural properties.
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