Abstract
Thin-film semiconductor oxides such as ZnO, CuO, and Cu₂O attract considerable scientific interest due to their unique structural, optical, and electrophysical properties. The functional characteristics of these materials strongly depend on crystal structure, phase composition, and microstructural organization formed during synthesis. X-ray diffraction analysis remains one of the most effective methods for investigating structural properties of semiconductor thin films.
The present study investigates structural characteristics of ZnO, CuO, and Cu₂O thin films deposited on dielectric substrates using ion-plasma technology. Particular attention was devoted to comparative analysis of phase composition, crystallographic orientation, crystallite size, and structural ordering of the obtained semiconductor layers.
X-ray diffraction investigations demonstrated formation of polycrystalline semiconductor structures with characteristic crystal phases corresponding to hexagonal ZnO, monoclinic CuO, and cubic Cu₂O. Deposition conditions significantly influenced diffraction peak intensity, crystallinity, and structural homogeneity of the films.
The obtained results indicate that ion-plasma deposition technology enables controlled formation of structurally stable oxide semiconductor films with favorable crystallographic characteristics suitable for optoelectronic and energy-related applications.
References
This work is licensed under a Creative Commons Attribution 4.0 International License.