Abstract
Copper(I) oxide (Cu₂O) thin films are considered promising semiconductor materials for modern optoelectronic, photovoltaic, and energy-related applications due to their direct band gap, high absorption coefficient, low toxicity, and favorable electrical properties. The structural and phase composition of Cu₂O films strongly depend on synthesis conditions and deposition technology.
The present study investigates phase formation processes in Cu₂O thin films synthesized on dielectric substrates using ion-plasma deposition technology. Particular attention was devoted to the influence of deposition parameters on crystallization behavior, phase stability, microstructural evolution, and electrophysical characteristics of the obtained films.
Structural analysis revealed successful formation of polycrystalline Cu₂O thin films with cubic crystal structure under optimized oxygen concentration and plasma conditions. Variations in deposition parameters significantly influenced phase composition, crystallite size, and defect concentration within the films.
The obtained results demonstrated that controlled ion-plasma deposition enables stabilization of Cu₂O phases and suppression of secondary copper oxide structures. Improved structural ordering contributed to enhanced electrical properties and increased uniformity of the semiconductor layers.
The investigated Cu₂O thin films exhibit promising potential for application in photovoltaic systems, optoelectronic devices, and semiconductor energy technologies.
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